JPH0156530B2 - - Google Patents
Info
- Publication number
- JPH0156530B2 JPH0156530B2 JP55123086A JP12308680A JPH0156530B2 JP H0156530 B2 JPH0156530 B2 JP H0156530B2 JP 55123086 A JP55123086 A JP 55123086A JP 12308680 A JP12308680 A JP 12308680A JP H0156530 B2 JPH0156530 B2 JP H0156530B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- epitaxial layer
- collector
- emitter
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55123086A JPS5748267A (en) | 1980-09-04 | 1980-09-04 | Transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55123086A JPS5748267A (en) | 1980-09-04 | 1980-09-04 | Transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5748267A JPS5748267A (en) | 1982-03-19 |
JPH0156530B2 true JPH0156530B2 (en]) | 1989-11-30 |
Family
ID=14851852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55123086A Granted JPS5748267A (en) | 1980-09-04 | 1980-09-04 | Transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5748267A (en]) |
-
1980
- 1980-09-04 JP JP55123086A patent/JPS5748267A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5748267A (en) | 1982-03-19 |
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